BSL307SP Datasheet and Replacement
Type Designator: BSL307SP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 234 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TSOP6
BSL307SP substitution
BSL307SP Datasheet (PDF)
bsl307sp.pdf

Rev 1.2BSL307SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -30 V P-ChannelRDS(on) 43 m Enhancement modeID -5.5 A Logic LevelPG-TSOP-6-1 150C operating temperature Avalanche rated dv/dt rated435261Drainpin 1,2,5,6Gatepin 3Type Package Tape and reel MarkingSourceBSL307SP PG-TSOP-6-1 L63
bsl307sp.pdf

BSL307SPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch
bsl308pe.pdf

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty
Datasheet: BSD314SPE , BSF024N03LT3G , BSF050N03LQ3G , BSF053N03LTG , BSF083N03LQG , BSL207SP , BSL211SP , BSL215P , 20N50 , BSL308PE , BSL314PE , BSL315P , BSO604NS2 , BSO033N03MSG , BSO040N03MSG , BSO051N03MSG , BSO052N03S .
History: P06P03LCGA | IRFBE30L | CSD16342Q5A
Keywords - BSL307SP MOSFET datasheet
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History: P06P03LCGA | IRFBE30L | CSD16342Q5A



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