BSL307SP Specs and Replacement
Type Designator: BSL307SP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 234 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TSOP6
BSL307SP substitution
- MOSFET ⓘ Cross-Reference Search
BSL307SP datasheet
bsl307sp.pdf
Rev 1.2 BSL307SP OptiMOS -P Small-Signal-Transistor Product Summary Feature VDS -30 V P-Channel RDS(on) 43 m Enhancement mode ID -5.5 A Logic Level PG-TSOP-6-1 150 C operating temperature Avalanche rated dv/dt rated 4 3 5 2 6 1 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL307SP PG-TSOP-6-1 L63... See More ⇒
bsl307sp.pdf
BSL307SP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Ch... See More ⇒
bsl308pe.pdf
BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-channel RDS(on),max VGS=-10 V 80 mW Enhancement mode VGS=-4.5 V 130 Logic level (4.5V rated) ID -2.0 A ESD protected PG-TSOP-6 Qualified according to AEC Q101 6 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-21 1 2 3 Ty... See More ⇒
bsl306n.pdf
BSL306N $=@6"$'F ' .99 '64;.9 (>.;?6?@ %>E Features 0 V DS T H5@ ) 7... See More ⇒
Detailed specifications: BSD314SPE, BSF024N03LT3G, BSF050N03LQ3G, BSF053N03LTG, BSF083N03LQG, BSL207SP, BSL211SP, BSL215P, STP80NF70, BSL308PE, BSL314PE, BSL315P, BSO604NS2, BSO033N03MSG, BSO040N03MSG, BSO051N03MSG, BSO052N03S
Keywords - BSL307SP MOSFET specs
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