BSO080P03NS3EG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSO080P03NS3EG datasheet

1.1. Size:673K infineon
bso080p03ns3e g.pdf pdf_icon

'$ % #' % % (>.;?6?@ %>E Features 0 V DS Q C ?8=6 ) 92??6= ? ,( . 8.0 mW DS(on) max GS 1) Q * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C . 11.4 GS Q T @A6B2D ?8 D6>A6B2DEB6 14.8 A D Q . CA64 2==I CE D65 7@B ?@D63@@A= 2?D Q 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8

2.1. Size:652K infineon
bso080p03ns3 g 2.2.pdf pdf_icon

'$ % #' % % (>.;?6?@ %>E Features 0 V DS Q C ?8=6 ) 92??6= ? ,( . 8.0 m DS(on) max GS 1) Q * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C . 11.4 GS Q T @A6B2D ?8 D6>A6B2DEB6 14.8 A D Q . CA64 2==I CE D65 7@B ?@D63@@A= 2?D Q 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8 Q "2=@86? 7B66

2.2. Size:533K infineon
bso080p03ns3g.pdf pdf_icon

BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS -30 V single P-Channel in SO8 RDS(on),max VGS=-10 V 8.0 mW Qualified according JEDEC1) for target applications VGS=-6 V 11.4 150 C operating temperature ID -14.8 A V =25 V, specially suited for notebook applications GS Pb-free plating; RoHS compliant PG-DSO-8 applications batter

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