BSO080P03NS3EG Datasheet and Replacement
Type Designator: BSO080P03NS3EG
Marking Code: 080P3NSE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.1 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 61 nC
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 2100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SO8
BSO080P03NS3EG substitution
BSO080P03NS3EG Datasheet (PDF)
bso080p03ns3e g.pdf

'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 mWDS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8
bso080p03ns3 g 2.2.pdf

'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 m DS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8Q "2=@86? 7B66
bso080p03ns3g.pdf

BSO080P03NS3 GOptiMOS3 P3-Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 8.0mW Qualified according JEDEC1) for target applicationsVGS=-6 V 11.4 150C operating temperatureID -14.8 A V =25 V, specially suited for notebook applicationsGS Pb-free plating; RoHS compliantPG-DSO-8 applications: batter
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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