BSO211PH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSO211PH Datasheet (PDF)

7.1. Size:477K infineon
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BSO211P HOptiMOS P-Power-TransistorProduct Summary FeaturesVDS -20 V dual P-Channel in SO8RDS(on),max VGS=4.5 V 67 mW Qualified according JEDEC for target applicationsVGS=2.5 V 110 150C operating temperatureID -A 4.6 Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21PG-DSO-8 Type Pa

7.2. Size:316K infineon
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BSO211P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 67mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 110GS 150C operating temperatureI 4.6 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-21Type P

9.1. Size:163K infineon
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Preliminary dataBSO 215 CSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 20 -20 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.1 0.1resistance Logic LevelContinuous drain current ID 3.7 -3.7 A Avalanche rated dv/dt ratedType Package Ordering CodeBSO 215 C SO 8 Q67041-S4025Maximum Ratings,at Tj = 25 C,

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