BSO211PH Datasheet and Replacement
Type Designator: BSO211PH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: SO8
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BSO211PH Datasheet (PDF)
bso211p.pdf

BSO211P HOptiMOS P-Power-TransistorProduct Summary FeaturesVDS -20 V dual P-Channel in SO8RDS(on),max VGS=4.5 V 67 mW Qualified according JEDEC for target applicationsVGS=2.5 V 110 150C operating temperatureID -A 4.6 Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21PG-DSO-8 Type Pa
bso211p h 13.pdf

BSO211P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 67mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 110GS 150C operating temperatureI 4.6 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-21Type P
bso215c.pdf

Preliminary dataBSO 215 CSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 20 -20 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.1 0.1resistance Logic LevelContinuous drain current ID 3.7 -3.7 A Avalanche rated dv/dt ratedType Package Ordering CodeBSO 215 C SO 8 Q67041-S4025Maximum Ratings,at Tj = 25 C,
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IPD95R450P7 | SVGP20110NSTR | SVF4N60CAMJ | MXP4004AT | 2SK3586-01 | AS4375 | MEE42942-G
Keywords - BSO211PH MOSFET datasheet
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History: IPD95R450P7 | SVGP20110NSTR | SVF4N60CAMJ | MXP4004AT | 2SK3586-01 | AS4375 | MEE42942-G



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