BSO303SPH Todos los transistores

 

BSO303SPH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSO303SPH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: SO8

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BSO303SPH datasheet

 6.1. Size:332K  infineon
 bso303sp .pdf pdf_icon

BSO303SPH

BSO303SP H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS single P-Channel in SO8 VGS=-4.5 V R 21 m DS(on),max Enhancement mode VGS=-2.5 V 31 m Logic level I -9.1 A D 150 C operating temperature PG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE

 6.2. Size:623K  infineon
 bso303sp.pdf pdf_icon

BSO303SPH

BSO303SP H OptiMOS -P Power-Transistor Product Summary Features VDS -30 V single P-Channel in SO8 RDS(on),max VGS=-10 V 21 mW Enhancement mode VGS=-4.5 V 31 mW Logic level ID -9.1 A 150 C operating temperature PG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Ty

 8.1. Size:462K  infineon
 bso303p.pdf pdf_icon

BSO303SPH

BSO303P H OptiMOS -P Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-Channel in SO8 VGS=-10V RDS(on),max 21 mW Enhancement mode VGS=-4.5V 32 Logic level ID -8.2 A 150 C operating temperature Qualified according JEDEC for target applications SO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant Type

 8.2. Size:499K  infineon
 bso303ph 1.3.pdf pdf_icon

BSO303SPH

BSO303P H OptiMOS -P Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-Channel in SO8 VGS=-10V RDS(on),max 21 mW Enhancement mode VGS=-4.5V 32 Logic level ID -8.2 A 150 C operating temperature Qualified according JEDEC for target applications SO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant Type

MOSTRAR MÁS

Otros transistores... BSO204P , BSO207PH , BSO211PH , BSO220N03MDG , BSO220N03MSG , BSO300N03S , BSO301SPH , BSO303PH , RU7088R , BSO330N02KG , BSO350N03 , BSO613SPVG , BSO615NG , BSP603S2L , BSP170P , BSP171P , BSP315P .

 

 

 

 

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