BSO303SPH Todos los transistores

 

BSO303SPH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSO303SPH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SO8
 

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BSO303SPH Datasheet (PDF)

 6.1. Size:332K  infineon
 bso303sp .pdf pdf_icon

BSO303SPH

BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS single P-Channel in SO8VGS=-4.5 V R 21mDS(on),max Enhancement modeVGS=-2.5 V 31m Logic levelI -9.1 AD 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE

 6.2. Size:623K  infineon
 bso303sp.pdf pdf_icon

BSO303SPH

BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 21mW Enhancement modeVGS=-4.5 V31mW Logic levelID -9.1 A 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Ty

 8.1. Size:462K  infineon
 bso303p.pdf pdf_icon

BSO303SPH

BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType

 8.2. Size:499K  infineon
 bso303ph 1.3.pdf pdf_icon

BSO303SPH

BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType

MOSTRAR MÁS

Otros transistores... BSO204P , BSO207PH , BSO211PH , BSO220N03MDG , BSO220N03MSG , BSO300N03S , BSO301SPH , BSO303PH , MMD60R360PRH , BSO330N02KG , BSO350N03 , BSO613SPVG , BSO615NG , BSP603S2L , BSP170P , BSP171P , BSP315P .

History: 2SK3857TV | SI2301BDS-T1-GE3 | HSM6901 | FHF4N60A | MCAC10H03 | P0660ED

 

 
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