All MOSFET. BSO303SPH Datasheet

 

BSO303SPH MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSO303SPH
   Marking Code: 303SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SO8

 BSO303SPH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSO303SPH Datasheet (PDF)

 6.1. Size:332K  infineon
bso303sp .pdf

BSO303SPH
BSO303SPH

BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS single P-Channel in SO8VGS=-4.5 V R 21mDS(on),max Enhancement modeVGS=-2.5 V 31m Logic levelI -9.1 AD 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE

 6.2. Size:623K  infineon
bso303sp.pdf

BSO303SPH
BSO303SPH

BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 21mW Enhancement modeVGS=-4.5 V31mW Logic levelID -9.1 A 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Ty

 8.1. Size:462K  infineon
bso303p.pdf

BSO303SPH
BSO303SPH

BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType

 8.2. Size:499K  infineon
bso303ph 1.3.pdf

BSO303SPH
BSO303SPH

BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType

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