BSP170P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP170P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET BSP170P
BSP170P Datasheet (PDF)
bsp170p.pdf
Preliminary dataBSP 170 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.3 Avalanche rated Continuous drain current ID -1.9 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP 170 P SOT-223 Q67041-S4018 G D SMaximu
bsp170p.pdf
BSP170Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete
bsp170p2.pdf
BSP170PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -1.9 AD Avalanche rated dv /dt ratedPG-SOT223 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free PackingBSP170P PG-SOT223 L6327: 1000pcs/reel BSP170
bsp17.pdf
BSP 17SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 17 50 V 3.2 A 0.1 SOT-223 BSP 17Type Ordering Code Tape and Reel InformationBSP 17 Q67000-S220 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA =
bsp171p.pdf
Preliminary dataBSP 171 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.3 Avalanche ratedContinuous drain current ID -1.9 A Logic Level4 dv/dt rated321VPS05163Type Package Ordering Code Pin 1 Pin2/4 PIN 3BSP 171 P SOT-223 Q67041-S4019 G D SMaximum
bsp171p .pdf
BSP171PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -1.9 AD Logic level Avalanche rated dv /dt ratedPG-SOT223 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and Reel Information Marking PackagingBSP171P PG-SOT223 L6327: 1000 pcs/r
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918