BSP317P Todos los transistores

 

BSP317P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSP317P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.43 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.1 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

BSP317P Datasheet (PDF)

 ..1. Size:406K  infineon
bsp317p.pdf pdf_icon

BSP317P

BSP317PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -250 V P-ChannelRDS(on) 4 Enhancement modeID -0.43 A Logic LevelPG-SOT223 dv/dt ratedDrain4pin 2/4Gate Qualified according to AEC Q101 pin13Source2pin 31VPS05163Type Package Tape and Reel Information Marking PackagingPG-SOT223BSP317P Non dryBS

 8.1. Size:116K  infineon
bsp317.pdf pdf_icon

BSP317P

BSP 317SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 317 -200 V -0.37 A 6 SOT-223Type Ordering Code Tape and Reel InformationBSP 317 Q67000-S94 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -200 VVDrain-

 9.1. Size:49K  philips
bsp31 bsp32 bsp33 3.pdf pdf_icon

BSP317P

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

 9.2. Size:73K  st
bsp30 bsp31 bsp32 bsp33.pdf pdf_icon

BSP317P

BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH

Otros transistores... BSO350N03 , BSO613SPVG , BSO615NG , BSP603S2L , BSP170P , BSP171P , BSP315P , BSP316P , IRF740 , BSP321P , BSP322P , BSP613P , BSP92P , BSR315P , BSR316P , BSR92P , BSS192P .

History: IXTP50N28T | 3SK249

 

 
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