BSP317P - описание и поиск аналогов

BSP317P SIPMOS Small-Signal-Transistor Product Summary Feature VDS -250 V P-Channel RDS(on) 4 Enhancement mode ID -0.43 A Logic Level PG-SOT223 dv/dt rated Drain 4 pin 2/4 Gate Qualified according to AEC Q101 pin1 3 Source 2 pin 3 1 VPS05163 Type Package Tape and Reel Information Marking Packaging PG-SOT223 BSP317P Non dry BS

BSP 317 SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 317 -200 V -0.37 A 6 SOT-223 Type Ordering Code Tape and Reel Information BSP 317 Q67000-S94 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS -200 V V Drain-

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP31; BSP32; BSP33 PNP medium power transistors 1999 Apr 26 Product specification Supersedes data of 1997 Apr 08 Philips Semiconductors Product specification PNP medium power transistors BSP31; BSP32; BSP33 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2, 4 collector AP

BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 NPN COMPLEMENTS ARE BSP40, BSP41, 1 BSP42 AND BSP43 RESPECTIVELY SOT-223 INTERNAL SCH

BSP31 BSP33 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking BSP31 P31 BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS 2 SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS 3 TAPE AND REEL PACKING 2 THE NPN COMPLEMENTARY TYPES ARE 1 BSP41 AND BSP43 RESPECTIVELY SOT-223 APPLICATIONS MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS OUT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSP 318 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 318 60 V 2.6 A 0.15 SOT-223 BSP 318 Type Ordering Code Tape and Reel Information BSP 318 Q67000-S127 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous dra

SOT223 PNP SILICON PLANAR BSP31 MEDIUM POWER TRANSISTORS BSP33 ISSUE 3 FEBRUARY 1996 T T C T I D T I D i i II E C B ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T T T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI II V V I V I V I II i V V I V I 8

BSP316P SIPMOS Small-Signal-Transistor Product Summary Feature VDS -100 V P-Channel RDS(on) 1.8 Enhancement mode ID -0.68 A Logic Level PG-SOT223-4-1 dv/dt rated Drain pin 2/4 Gate Qualified according to AEC Q101 pin1 Halogen free according to IE C61249 2 21 Source pin 3 Type Package Tape and Reel Information Marking Packa

Preliminary data BSP 315 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.8 Avalanche rated Continuous drain current ID -1.17 A Logic Level 4 dv/dt rated 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin2/4 PIN 3 BSP 315 P SOT-223 Q67042-S4004 G D S Maximum

Rev 2.3 BSP318S SIPMOS Small-Signal-Transistor Features Product Summary N-Channel Drain source voltage VDS 60 V Enhancement mode Drain-Source on-state resistance RDS(on) 0.09 Avalanche rated Continuous drain current ID 2.6 A Logic Level 4 dv/dt rated Pb-free lead plating; RoHS compliant 3 Pin 1 Pin 2, 4 PIN 3 Qualified according to AEC Q101

BSP 316 SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 SOT-223 BSP 316 Type Ordering Code Tape and Reel Information BSP 316 Q67000-S92 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS -100 V

BSP 319 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 319 50 V 3.8 A 0.07 SOT-223 BSP 319 Type Ordering Code Tape and Reel Information BSP 319 Q67000-S273 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous dra

BSP315P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-Source on-state resistance RDS(on) 0.8 Avalanche rated Continuous drain current ID -1.17 A Logic Level 4 dv/dt rated Pin 1 Pin2/4 PIN 3 3 Qualified according to AEC Q101 2 G D S 1 VPS05163 Type Package Tape and Reel In

BSP315P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete