BSS83P Todos los transistores

BSS 83 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 2 Avalanche rated Continuous drain current ID -0.33 A Logic Level 3 dv/dt rated 2 1 VPS05161 Type Package Tape and Reel Marking Pin 1 PIN 2 PIN 3 BSS 83 P PG-SOT-23 L6327 3000pcs/r. G S D YAs Maximum Ratin

Preliminary data BSS 83 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 2 Avalanche rated Continuous drain current ID -0.33 A Logic Level 3 dv/dt rated 2 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 83 P SOT-23 Q67041-S1416 YAs G S D Maxi

DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 DESCRIPTION Marking code Symmetrical insulated-gate silicon BSS83 = M74 MOS field-effect transistor of the N-channel

BSS83 MOSFET N-channel enhancement switching transistor Rev. 03 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links