BSS83P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSS 83 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 2 Avalanche ratedContinuous drain current ID -0.33 A Logic Level3 dv/dt rated21VPS05161Type Package Tape and Reel Marking Pin 1 PIN 2 PIN 3BSS 83 P PG-SOT-23 L6327: 3000pcs/r. G S DYAsMaximum Ratin

Preliminary dataBSS 83 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 2 Avalanche ratedContinuous drain current ID -0.33 A Logic Level3 dv/dt rated21VPS05161Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3BSS 83 P SOT-23 Q67041-S1416 YAs G S DMaxi

DISCRETE SEMICONDUCTORSDATA SHEETBSS83MOSFET N-channel enhancementswitching transistorApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationMOSFET N-channel enhancement switching transistor BSS83DESCRIPTION Marking code:Symmetrical insulated-gate silicon BSS83 = M74MOS field-effect transistor of theN-channel

BSS83MOSFET N-channel enhancement switching transistorRev. 03 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links