BSZ086P03NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

&+ $ "& '! $ $ '>.;?6?@ $>E VFeatures DS 8.6m R C:?8=6 ) 92??6= :? , ( DS(on) max1) 40 AR * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?CDR U @A6B2D:?8 D6>A6B2DEB6 PGTSDSON8R . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DR 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8R "2=@86? 7B66 244@B5:?8 D@ # Type Pac

BSZ086P03NS3 GOptiMOSTM P3 Power-TransistorProduct Summary VDS -30 V FeaturesRDS(on),max 8.6 single P-Channel in S3O8 mW Qualified according JEDEC1) for target applicationsID -40 A PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applicationsGS Pb-free; RoHS compliant applications: battery management, load switchin

&+ $ "& '! $ $ '>.;?6?@$>EFeatures VDSR C:?8=6 ) 92??6= :? , ( 8.6m DS(on) max1)R * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C 40 ADR U @A6B2D:?8 D6>A6B2DEB6PGTSDSON8R . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DR , AB@D64D65R 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8R "2=@86? 7B66 244@B5:?8

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VBSZ084N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VBSZ084N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC co

%* ! % E #;B 1= "% &#=;0@/? %@9 9 -=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x 4 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 ,

$) $ D $0S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7D