BSZ086P03NS3G - описание и поиск аналогов

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BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary VDS -30 V Features RDS(on),max 8.6 single P-Channel in S3O8 mW Qualified according JEDEC1) for target applications ID -40 A PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applications GS Pb-free; RoHS compliant applications battery management, load switchin

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ084N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ084N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC co

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