BSZ120P03NS3EG Todos los transistores

BSZ120P03NS3E G Product Summary OptiMOSTM P3 Power-Transistor V -30 V DS Features R 12 m DS(on),max single P-Channel in S3O8 I -40 A Qualified according JEDEC1) for target applications D PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applications GS Pb-free; RoHS compliant ESD protected applications battery mana

&+ $ "& '! $>E $ $ '>.;?6?@ V DS Features 12 m DS(on) max R C ?8=6 ) 92??6= ? , ( 1) 40 A R * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C D PG TSDSON 8 R U @A6B2D ?8 D6>A6B2DEB6 R . CA64 2==I CE D65 7@B ?@D63@@A= 2?D R 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8 R "2=@86? 7B66 244@B5 ?8 D@ # Type

Type BSZ12DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V Optimized for dc-dc conversion RDS(on),max 125 mW N-channel, normal level ID 11.3 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

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