BSZ120P03NS3EG - параметры транзистора MOSFET, его аналоги, datasheet

BSZ120P03NS3EG Datasheet (PDF)

0.1. Size:298K infineon
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BSZ120P03NS3E GProduct SummaryOptiMOSTM P3 Power-TransistorV -30 VDSFeaturesR 12mDS(on),max single P-Channel in S3O8I -40 A Qualified according JEDEC1) for target applications DPG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applicationsGS Pb-free; RoHS compliant ESD protected applications: battery mana

2.1. Size:614K infineon
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&+ $ "& '! $>E $ $ '>.;?6?@ VDSFeatures 12m DS(on) maxR C:?8=6 ) 92??6= :? , ( 1) 40 AR * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C DPGTSDSON8R U @A6B2D:?8 D6>A6B2DEB6R . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DR 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8R "2=@86? 7B66 244@B5:?8 D@ # Type

9.1. Size:571K infineon
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TypeBSZ12DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 125mW N-channel, normal levelID 11.3 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

9.2. Size:478K infineon
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