BSZ16DN25NS3G Todos los transistores

 ..1. Size:572K  infineon
 bsz16dn25ns3 bsz16dn25ns3g.pdf

Type BSZ16DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V Optimized for dc-dc conversion RDS(on),max 165 mW N-channel, normal level ID 10.9 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

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 bsz160n10ns3g.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power Transistor BSZ160N10NS3 Data Sheet Rev. 2.1 Final Power Management & Multimarket BSZ160N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Ideal for high frequency switching RDS(on),max 16 mW Optimized technology for DC/DC converters ID

 9.2. Size:452K  infineon
 bsz160n10n3sg.pdf

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 bsz165n04nsg.pdf

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 9.4. Size:489K  infineon
 bsz160n10ns3.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power Transistor BSZ160N10NS3 Data Sheet Rev. 2.1 Final Power Management & Multimarket BSZ160N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Ideal for high frequency switching RDS(on),max 16 mW Optimized technology for DC/DC converters ID