APT5024BVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5024BVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de APT5024BVR MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT5024BVR datasheet

 ..1. Size:59K  apt
apt5024bvr.pdf pdf_icon

APT5024BVR

APT5024BVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 ..2. Size:375K  inchange semiconductor
apt5024bvr.pdf pdf_icon

APT5024BVR

isc N-Channel MOSFET Transistor APT5024BVR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 5.1. Size:61K  apt
apt5024bvfr.pdf pdf_icon

APT5024BVR

APT5024BVFR 500V 22A 0.240 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 5.2. Size:375K  inchange semiconductor
apt5024bvfr.pdf pdf_icon

APT5024BVR

isc N-Channel MOSFET Transistor APT5024BVFR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... APT5020BN, APT5020BVFR, APT5020BVR, APT5020SVFR, APT5020SVR, APT5022AVR, APT5024AVR, APT5024BVFR, TK10A60D, APT5025BN, APT5026HVR, APT5028BVR, APT5028SVR, APT5030AVR, APT5032CVR, APT5040CNR, APT50M50JVFR