APT5024BVR Specs and Replacement

Type Designator: APT5024BVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO247

APT5024BVR substitution

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APT5024BVR datasheet

 ..1. Size:59K  apt
apt5024bvr.pdf pdf_icon

APT5024BVR

APT5024BVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 ..2. Size:375K  inchange semiconductor
apt5024bvr.pdf pdf_icon

APT5024BVR

isc N-Channel MOSFET Transistor APT5024BVR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 5.1. Size:61K  apt
apt5024bvfr.pdf pdf_icon

APT5024BVR

APT5024BVFR 500V 22A 0.240 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 5.2. Size:375K  inchange semiconductor
apt5024bvfr.pdf pdf_icon

APT5024BVR

isc N-Channel MOSFET Transistor APT5024BVFR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: APT5020BN, APT5020BVFR, APT5020BVR, APT5020SVFR, APT5020SVR, APT5022AVR, APT5024AVR, APT5024BVFR, TK10A60D, APT5025BN, APT5026HVR, APT5028BVR, APT5028SVR, APT5030AVR, APT5032CVR, APT5040CNR, APT50M50JVFR

Keywords - APT5024BVR MOSFET specs

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