BUZ31H Todos los transistores

 

BUZ31H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ31H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 95 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 14.5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO220

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BUZ31H Datasheet (PDF)

1.1. buz31h rev2.5.pdf Size:388K _infineon

BUZ31H
BUZ31H

BUZ 31 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 H 200 V 14.5 A 0.2 ? PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 ?C 14.5 Pulsed dr

1.2. buz31h3045arev2.1.pdf Size:1209K _infineon

BUZ31H
BUZ31H

BUZ31 H3045 A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free PG-TO263-3 BUZ31 H3045A Yes Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A 2009-11-09 Rev 2.1 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.

 5.1. buz310.pdf Size:137K _update_mosfet

BUZ31H
BUZ31H

BUZ 310 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 310 1000 V 2.5 A 5 Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 kΩ 1000 Continuous drain current ID A TC = 25 °C 2.5 Pulsed drain current IDpul

5.2. buz31l.pdf Size:506K _update_mosfet

BUZ31H
BUZ31H

BUZ 31L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 L 200 V 13.5 A 0.2 Ω PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ˚C 13.5 Pulsed drain current IDpuls TC = 25 ˚C 54 Avalanche current,limited by Tjmax

 5.3. buz31.pdf Size:501K _update_mosfet

BUZ31H
BUZ31H

BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 200 V 14.5 A 0.2 Ω PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 ˚C 14.5 Pulsed drain current IDpuls TC = 25 ˚C 58 Avalanche current,limited by Tjmax I

5.4. buz310.pdf Size:240K _siemens

BUZ31H
BUZ31H

BUZ 310 SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 310 1000 V 2.5 A 5 ? TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k? 1000 Continuous drain current ID A TC = 25 C 2.5 Pulsed drain current IDpuls TC = 25 C

 5.5. buz312.pdf Size:211K _siemens

BUZ31H
BUZ31H

BUZ 312 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 312 1000 V 6 A 1.5 ? TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 C 6 Pulsed drain current IDpuls TC = 25 C 24 Avalanche current,limited by Tjmax IAR 6 Avalanche en

5.6. buz311.pdf Size:240K _siemens

BUZ31H
BUZ31H

BUZ 311 SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 311 1000 V 2.5 A 5 ? TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k? 1000 Continuous drain current ID A TC = 25 C 2.5 Pulsed drain current IDpuls TC = 25 C

5.7. buz31lh rev2.4.pdf Size:420K _infineon

BUZ31H
BUZ31H

BUZ 31L H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 L H 200 V 13.5 A 0.2 ? PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ?C 13.5 Pulsed drain current IDpuls TC = 25 ?C 54 Aval

5.8. buz31l.pdf Size:88K _infineon

BUZ31H
BUZ31H

BUZ 31L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 L 200 V 13.5 A 0.2 ? TO-220 AB C67078-S1322-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ?C 13.5 Pulsed drain current IDpuls TC = 25 ?C 54 Avalanche current,limited by Tjmax

5.9. buz31.pdf Size:88K _infineon

BUZ31H
BUZ31H

BUZ 31 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 200 V 14.5 A 0.2 ? TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 ?C 14.5 Pulsed drain current IDpuls TC = 25 ?C 58 Avalanche current,limited by Tjmax IAR 14.5 Ava

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