BUZ31H - аналоги, даташиты, параметры транзистора

BUZ31H Datasheet (PDF)

..1. Size:388K infineon
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BUZ 31 HSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level. Pb-free lead plating; RoHs compliant. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 H 200 V 14.5 A 0.2 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C

0.1. Size:796K 1
buz31h3046.pdf pdf_icon

BUZ 31 H3046SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level. Pb-free lead plating; RoHs compliant. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 H3046 200 V 14.5 A 0.2 PG-TO-262-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC =

0.2. Size:1209K infineon
buz31h3045a.pdf pdf_icon

BUZ31 H3045 A. Pb-free lead plating; RoHS compliant. Halogen-free according to IEC61249-2-21Pb-freePG-TO263-3BUZ31 H3045A YesRev 2.1 2009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.1 2009-11-09BUZ31 H3045 A2009-11-09Rev 2.1BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev

0.3. Size:235K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUZ31H3046FEATURESEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

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