BUZ32H Todos los transistores

 

BUZ32H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ32H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220

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BUZ32H Datasheet (PDF)

 ..1. Size:402K  infineon
buz32h.pdf

BUZ32H
BUZ32H

BUZ 32 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 32 H 200 V 9.5 A 0.4 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalan

 0.1. Size:1225K  infineon
buz32h3045a.pdf

BUZ32H
BUZ32H

BUZ 32 H3045A. Pb-free lead plating; RoHS compliant. Halogen-free according to IEC61249-2-21Pb-freePG-TO263-3BUZ32 H3045A YesRev. 2.2 2009-11-10BUZ 32 H3045ARev 2.2 2009-11-10BUZ 32 H3045ARev 2.2 2009-11-10BUZ 32 H3045ARev 2.22009-11-10BUZ 32 H3045A2009-11-10Rev 2.2BUZ 32 H3045A2009-11-10Rev 2.2BUZ32 H3045ARev 2.22009-11-10BUZ 32 H3045ARev

 9.1. Size:282K  st
buz32.pdf

BUZ32H
BUZ32H

 9.2. Size:219K  siemens
buz326.pdf

BUZ32H
BUZ32H

BUZ 326SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 326 400 V 10.5 A 0.5 TO-218 AA C67078-S3112-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 10.5Pulsed drain current IDpulsTC = 25 C 42Avalanche current,limited by Tjmax

 9.3. Size:142K  siemens
buz323.pdf

BUZ32H
BUZ32H

BUZ 323SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 323 400 V 15 A 0.3 TO-218 AA C67078-S3127-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 15Pulsed drain current IDpulsTC = 25 C 60Avalanche current,limited by Tjmax IAR

 9.4. Size:366K  siemens
buz325.pdf

BUZ32H
BUZ32H

SIPMOS Power Transistor BUZ 325 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 325 400 V 12.5 A 0.35 TO-218 AA C67078-S3118-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 12.5 APulsed drain current, TC =25C ID puls 50Avalanche current, limited by Tj max IAR 12.5Avalanche energy, per

 9.5. Size:90K  infineon
buz32.pdf

BUZ32H
BUZ32H

BUZ 32 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 32 200 V 9.5 A 0.4 TO-220 AB C67078-S1310-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA

 9.6. Size:231K  inchange semiconductor
buz326.pdf

BUZ32H
BUZ32H

isc N-Channel Mosfet Transistor BUZ326FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

 9.7. Size:230K  inchange semiconductor
buz32.pdf

BUZ32H
BUZ32H

isc N-Channel Mosfet Transistor BUZ32FEATURES9.5A, 200VRDS(ON) = 0.400SOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,

 9.8. Size:231K  inchange semiconductor
buz325.pdf

BUZ32H
BUZ32H

isc N-Channel Mosfet Transistor BUZ325FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

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