BUZ32H - описание и поиск аналогов

BUZ 32 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 32 H 200 V 9.5 A 0.4 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 9.5 Pulsed drain current IDpuls TC = 25 C 38 Avalan

BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free PG-TO263-3 BUZ32 H3045A Yes Rev. 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A 2009-11-10 Rev 2.2 BUZ 32 H3045A 2009-11-10 Rev 2.2 BUZ32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev

BUZ 326 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 326 400 V 10.5 A 0.5 TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 10.5 Pulsed drain current IDpuls TC = 25 C 42 Avalanche current,limited by Tjmax

BUZ 323 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 323 400 V 15 A 0.3 TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 15 Pulsed drain current IDpuls TC = 25 C 60 Avalanche current,limited by Tjmax IAR

SIPMOS Power Transistor BUZ 325 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 325 400 V 12.5 A 0.35 TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, TC = 27 C ID 12.5 A Pulsed drain current, TC =25 C ID puls 50 Avalanche current, limited by Tj max IAR 12.5 Avalanche energy, per

BUZ 32 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 TO-220 AB C67078-S1310-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 9.5 Pulsed drain current IDpuls TC = 25 C 38 Avalanche current,limited by Tjmax IA

isc N-Channel Mosfet Transistor BUZ326 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

isc N-Channel Mosfet Transistor BUZ32 FEATURES 9.5A, 200V RDS(ON) = 0.400 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators,

isc N-Channel Mosfet Transistor BUZ325 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc