IPA028N08N3G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPA028N08N3G datasheet

3.1. Size:538K infineon
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9.1. Size:1794K infineon
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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA029N06N Data Sheet Rev. 2.2 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 60 V IPA029N06N TO-220-FP 1 Description Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

9.2. Size:1051K infineon
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IPA029N06NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 60 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

9.3. Size:201K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA029N06N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS

Otros transistores... BUZ31H3045A , BUZ31LH , BUZ32H , BUZ32H3045A , BUZ73H , BUZ73AH , BUZ73ALH , BUZ73LH , IRFZ24N , IPA030N10N3G , IPA032N06N3G , IPA037N08N3G , IPA045N10N3G , IPA057N06N3G , IPA057N08N3G , IPA075N15N3G , IPA086N10N3G .