IPA028N08N3G MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA028N08N3G
Marking Code: 028N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 89 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 155 nC
trⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 2890 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO220FP
IPA028N08N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA028N08N3G Datasheet (PDF)
ipa029n06n.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA029N06NData SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA029N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel
ipa029n06nm5s.pdf
IPA029N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa029n06n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA029N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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