IPA028N08N3G Datasheet and Replacement
Type Designator: IPA028N08N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 89 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 2890 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO220FP
IPA028N08N3G substitution
IPA028N08N3G Datasheet (PDF)
ipa029n06n.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA029N06NData SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA029N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel
ipa029n06nm5s.pdf

IPA029N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa029n06n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA029N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
Datasheet: BUZ31H3045A , BUZ31LH , BUZ32H , BUZ32H3045A , BUZ73H , BUZ73AH , BUZ73ALH , BUZ73LH , AON6380 , IPA030N10N3G , IPA032N06N3G , IPA037N08N3G , IPA045N10N3G , IPA057N06N3G , IPA057N08N3G , IPA075N15N3G , IPA086N10N3G .
History: TSM3455CX6
Keywords - IPA028N08N3G MOSFET datasheet
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History: TSM3455CX6



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