IPA032N06N3G Todos los transistores

 ..1. Size:332K  infineon
 ipa032n06n3g.pdf

Type IPA032N06N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 3.2 mW Optimized technology for DC/DC converters ID 84 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com

 3.1. Size:542K  infineon
 ipa032n06n3 rev20.pdf

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 3.2. Size:201K  inchange semiconductor
 ipa032n06n3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA032N06N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 9.1. Size:393K  infineon
 ipa037n08n3g.pdf

IPA037N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching and sync. rec. RDS(on),max 3.7 mW Optimized technology for DC/DC converters ID 75 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli

 9.2. Size:335K  infineon
 ipa030n10n3g.pdf

IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 3 mW Excellent gate charge x R product (FOM) DS(on) ID 79 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen

 9.3. Size:536K  infineon
 ipa037n08n3.pdf

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 9.4. Size:255K  inchange semiconductor
 ipa030n10n3.pdf

isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 FEATURES Low drain-source on-resistance RDS(on) 3m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.5. Size:256K  inchange semiconductor
 ipa037n08n3.pdf

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 FEATURES Low drain-source on-resistance RDS(on) 3.7m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM