IPA032N06N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA032N06N3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 2200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de IPA032N06N3G MOSFET
IPA032N06N3G Datasheet (PDF)
ipa032n06n3g.pdf

Type IPA032N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.2 mW Optimized technology for DC/DC convertersID 84 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com
ipa032n06n3 rev20.pdf

pe # ! ! TM #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 4 DQ H35
ipa032n06n3.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA032N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa037n08n3g.pdf

IPA037N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.7 mW Optimized technology for DC/DC convertersID 75 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli
Otros transistores... BUZ32H , BUZ32H3045A , BUZ73H , BUZ73AH , BUZ73ALH , BUZ73LH , IPA028N08N3G , IPA030N10N3G , K2611 , IPA037N08N3G , IPA045N10N3G , IPA057N06N3G , IPA057N08N3G , IPA075N15N3G , IPA086N10N3G , IPA093N06N3G , IPA100N08N3G .
History: FTK10N65F | APM4826K | BLP10N20J-P | CMPF5484 | JCS10N70CH | DMP3025LK3
History: FTK10N65F | APM4826K | BLP10N20J-P | CMPF5484 | JCS10N70CH | DMP3025LK3



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032 | tip32c datasheet