IPA126N10N3G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPA126N10N3G datasheet

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IPA126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 12.6 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq

4.1. Size:1052K infineon
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IPA126N10NM3S MOSFET PG-TO 220 FP OptiMOSTM 3 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

Otros transistores... IPA045N10N3G , IPA057N06N3G , IPA057N08N3G , IPA075N15N3G , IPA086N10N3G , IPA093N06N3G , IPA100N08N3G , IPA105N15N3G , IRF830 , IPA180N10N3G , IPA50R140CP , IPA50R199CP , IPA50R250CP , IPA50R299CP , IPA50R350CP , IPA50R380CE , IPA50R399CP .