IPA126N10N3G MOSFET Datasheet: N-Ch, 100V, 35A. Full specification with pinout and replacement list

IPA126N10N3G Specs and Replacement

Type Designator: IPA126N10N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0126 Ohm

Package: TO220FP

IPA126N10N3G substitution

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IPA126N10N3G datasheet

..1. Size:335K infineon
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IPA126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 12.6 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq... See More ⇒

4.1. Size:1052K infineon
ipa126n10nm3s.pdf pdf_icon

IPA126N10NM3S MOSFET PG-TO 220 FP OptiMOSTM 3 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified... See More ⇒

Detailed specifications: IPA045N10N3G, IPA057N06N3G, IPA057N08N3G, IPA075N15N3G, IPA086N10N3G, IPA093N06N3G, IPA100N08N3G, IPA105N15N3G, IRF830, IPA180N10N3G, IPA50R140CP, IPA50R199CP, IPA50R250CP, IPA50R299CP, IPA50R350CP, IPA50R380CE, IPA50R399CP