IPA60R125CP Todos los transistores

 

IPA60R125CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA60R125CP

Código: 6R125P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 53 nC

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 120 pF

Resistencia drenaje-fuente RDS(on): 0.125 Ohm

Empaquetado / Estuche: TO220FP

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IPA60R125CP Datasheet (PDF)

1.1. ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf Size:1257K _update-mosfet

IPA60R125CP
IPA60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CססIMOS C6 Pסwer Transistסr IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descriptiסn CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

1.2. ipa60r125cp rev2.1.pdf Size:557K _infineon

IPA60R125CP
IPA60R125CP

IPA60R125CP C??IMOS $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@ DS on Y 0.125 DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: 5 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" PG?TO220 V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound ;;8"#&

 1.3. ipa60r125p6.pdf Size:2729K _infineon

IPA60R125CP
IPA60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.4. ipa60r125p6.pdf Size:245K _inchange_semiconductor

IPA60R125CP
IPA60R125CP

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤0.125Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

 1.5. ipa60r125c6.pdf Size:205K _inchange_semiconductor

IPA60R125CP
IPA60R125CP

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25

1.6. ipa60r125cp.pdf Size:201K _inchange_semiconductor

IPA60R125CP
IPA60R125CP

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

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