IPA60R125CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPA60R125CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V 4DGA9L>9 7 HI / >C 1, #JAAE6@ DS on Y 0.125 DS(on) max j V 2 AIG6 ADL IN V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

IPA60R125CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj