All MOSFET. IPA60R125CP Datasheet

 

IPA60R125CP Datasheet and Replacement


   Type Designator: IPA60R125CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO220FP
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IPA60R125CP Datasheet (PDF)

 ..1. Size:557K  infineon
ipa60r125cp.pdf pdf_icon

IPA60R125CP

IPA60R125CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@DS on Y 0.125 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

 ..2. Size:201K  inchange semiconductor
ipa60r125cp.pdf pdf_icon

IPA60R125CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 4.1. Size:1105K  infineon
ipa60r125cfd7.pdf pdf_icon

IPA60R125CP

IPA60R125CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

 4.2. Size:1257K  infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf pdf_icon

IPA60R125CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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