IPA65R280C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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MOSFET+

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R280C6FEATURESWith TO-220F PackageDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

MOSFET+

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R280E6FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R225C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R225C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME