IPA65R280C6 Specs and Replacement
Type Designator: IPA65R280C6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220FP
IPA65R280C6 substitution
- MOSFET ⓘ Cross-Reference Search
IPA65R280C6 datasheet
ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf
MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒
ipa65r280c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280C6 FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
Detailed specifications: IPA60R520C6, IPA60R520CP, IPA60R520E6, IPA60R600C6, IPA60R600CP, IPA60R600E6, IPA60R750E6, IPA60R950C6, 10N60, IPA65R280E6, IPA65R380C6, IPA65R380E6, IPA65R600C6, IPA65R600E6, IPA65R660CFD, IPA90R1K0C3, IPA90R1K2C3
Keywords - IPA65R280C6 MOSFET specs
IPA65R280C6 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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