IPA65R600C6 Todos los transistores

 ..1. Size:2158K  infineon
 ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

 ..2. Size:2092K  infineon
 ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

 ..3. Size:2092K  infineon
 ipa65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

 ..4. Size:201K  inchange semiconductor
 ipa65r600c6.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R600C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 5.1. Size:919K  infineon
 ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe

 5.2. Size:1867K  infineon
 ipa65r600e6.pdf

MOSFET + =L9D - PA

 7.1. Size:1158K  infineon
 ipa65r650ce ipd65r650ce.pdf

IPA65R650CE, IPD65R650CE MOSFET TO-220 FP DPAK 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighti

 7.2. Size:4455K  infineon
 ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi

 7.3. Size:1340K  infineon
 ipa65r650ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPx65R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPD65R650CE, IPA65R650CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 7.4. Size:202K  inchange semiconductor
 ipa65r650ce.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R650CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte

 7.5. Size:225K  inchange semiconductor
 ipa65r660cfd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R660CFD FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.66 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(