IPA65R600C6
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA65R600C6
Marking Code: 65C6600
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 7.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO220FP
IPA65R600C6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA65R600C6
Datasheet (PDF)
..3. Size:2092K infineon
ipa65r600c6.pdf
MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K
..4. Size:201K inchange semiconductor
ipa65r600c6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R600C6FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
5.1. Size:919K infineon
ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
7.1. Size:1158K infineon
ipa65r650ce ipd65r650ce.pdf
IPA65R650CE, IPD65R650CEMOSFETTO-220 FP DPAK650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighti
7.2. Size:4455K infineon
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R660CFDData SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R660CFD, IPB65R660CFD, IPP65R660CFDIPA65R660CFD, IPD65R660CFD, IPI65R660CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for hi
7.3. Size:1340K infineon
ipa65r650ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPx65R650CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPD65R650CE, IPA65R650CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
7.4. Size:202K inchange semiconductor
ipa65r650ce.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA65R650CEFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte
7.5. Size:225K inchange semiconductor
ipa65r660cfd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R660CFDFEATURESWith TO-220F PackageDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.66(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(
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