IPA90R800C3 Todos los transistores

 ..1. Size:266K  infineon
 ipa90r800c3.pdf

IPA90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 FP Ultra low gate charge CoolMOS

 8.1. Size:335K  infineon
 ipa90r1k2c3.pdf

IPA90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 FP Ultra low gate charge CoolMOS 9

 8.2. Size:365K  infineon
 ipa90r500c3.pdf

IPA90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 FP Ultra low gate charge CoolMOS

 8.3. Size:267K  infineon
 ipa90r340c3.pdf

IPA90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP

 8.4. Size:731K  infineon
 ipa90r1k0c3.pdf

IPA90R1K0C3 C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @ =25 C 900 V !0 U )DL HI ;>I / M . ON g X 1.0 W DS(on) max U "MIG B 9K 9I G6I 9 4 nC g typ U %>A>IN U . J6A>;> 9 for industrial grade applications 688DG9>CC6CI U 2 AIG6 ADL 53 10 2;= U . J6

 8.5. Size:246K  inchange semiconductor
 ipa90r1k2c3.pdf

isc N-Channel MOSFET Transistor IPA90R1K2C3 IIPA90R1K2C3 FEATURES Static drain-source on-resistance RDS(on) 1.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.6. Size:239K  inchange semiconductor
 ipa90r500c3.pdf

isc N-Channel MOSFET Transistor IPA90R500C3, IIPA90R500C3 FEATURES Drain-source on-resistance RDS(on) 0.5 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 8.7. Size:225K  inchange semiconductor
 ipa90r340c3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA90R340C3 FEATURES With TO-220F Package Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T