IPA90R800C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA90R800C3
Marking Code: 9R800C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 6.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 52
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO220FP
IPA90R800C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA90R800C3
Datasheet (PDF)
..1. Size:266K infineon
ipa90r800c3.pdf 
IPA90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS
8.1. Size:335K infineon
ipa90r1k2c3.pdf
IPA90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS 9
8.2. Size:365K infineon
ipa90r500c3.pdf
IPA90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS
8.3. Size:267K infineon
ipa90r340c3.pdf
IPA90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP
8.4. Size:731K infineon
ipa90r1k0c3.pdf
IPA90R1K0C3CIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @ =25C 900 V!0 U )DL:HI ;>I / M .ON g X 1.0 WDS(on) max U "MIG:B: 9K 9I G6I:9 4 nCg typU %>A>INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL 53:10 2;=U . J6
8.5. Size:246K inchange semiconductor
ipa90r1k2c3.pdf
isc N-Channel MOSFET Transistor IPA90R1K2C3IIPA90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on) 1.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a
8.6. Size:239K inchange semiconductor
ipa90r500c3.pdf
isc N-Channel MOSFET Transistor IPA90R500C3, IIPA90R500C3FEATURES Drain-source on-resistance:RDS(on) 0.5@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
8.7. Size:225K inchange semiconductor
ipa90r340c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA90R340C3FEATURESWith TO-220F PackageDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
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