IPB180N04S4-00 Todos los transistores

 

IPB180N04S4-00 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB180N04S4-00
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 3780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00098 Ohm
   Paquete / Cubierta: TO263-7
 

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IPB180N04S4-00 Datasheet (PDF)

 ..1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N04S4-00

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim

 ..2. Size:162K  infineon
ipb180n04s4-00 ds 1 0.pdf pdf_icon

IPB180N04S4-00

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040

 1.1. Size:162K  infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf pdf_icon

IPB180N04S4-00

IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401

 2.1. Size:162K  infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf pdf_icon

IPB180N04S4-00

IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0

Otros transistores... IPB100P03P3L-04 , IPB120N04S3-02 , IPB120N06S4-03 , IPB160N04S2-03 , IPB160N04S2L-03 , IPB160N04S3-H2 , IPB180N03S4L-H0 , IPB180N04S3-02 , IRF530 , IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 .

History: NCE65N330R | PMN230ENEA | AOB414

 

 
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