IPB70N10S3-12 Todos los transistores

 

IPB70N10S3-12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB70N10S3-12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 940 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0113 Ohm
   Paquete / Cubierta: TO263
 

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IPB70N10S3-12 Datasheet (PDF)

 ..1. Size:186K  infineon
 ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf pdf_icon

IPB70N10S3-12

IPB70N10S3-12IPI70N10S3-12, IPP70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 11.3mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanc

 4.1. Size:160K  infineon
 ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf pdf_icon

IPB70N10S3-12

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mWDS(on),maxI 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche

 4.2. Size:187K  infineon
 ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf pdf_icon

IPB70N10S3-12

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalan

 5.1. Size:124K  infineon
 ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPB70N10S3-12

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

MOSTRAR MÁS

Otros transistores... IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IPB70N04S3-07 , P60NF06 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 , IPB80N04S2-H4 , IPB80N04S2L-03 .

History: AP3C023AMT | CHM5506JGP | STU70N2LH5 | PMCXB900UE | AP50T10GP-HF | APM2309AC | RSS090P03FU6TB

 

 
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