IPB70N10S3-12. Аналоги и основные параметры
Наименование производителя: IPB70N10S3-12
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 940 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0113 Ohm
Тип корпуса: TO263
Аналог (замена) для IPB70N10S3-12
- подборⓘ MOSFET транзистора по параметрам
IPB70N10S3-12 даташит
ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf
IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanc
ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf
IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 mW DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche
ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf
IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalan
ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf
IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP7
Другие MOSFET... IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IPB70N04S3-07 , AO4407 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 , IPB80N04S2-H4 , IPB80N04S2L-03 .
🌐 : EN ES РУ
Список транзисторов
Обновления
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