APT50M60JN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT50M60JN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 690 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 71 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 2230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT227

Búsqueda de reemplazo de MOSFET APT50M60JN

APT50M60JN Datasheet (PDF)

..1. Size:60K apt
apt50m60jn.pdf

DGAPT50M60JN 500V 71A 0.06OS"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 50M60JN UNITVDSS Drain-Source Voltage500 VoltsID Continuous Drain Current @ TC = 25C71AmpsIDM, lLM Pulse

5.1. Size:165K apt
apt50m60jvfr.pdf

APT50M60JVFR500V 63A 0.060 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Popula

5.2. Size:147K apt
apt50m60jvr.pdf

APT50M60JVR500V 63A 0.060 POWER MOS V MOSFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Popular

6.1. Size:167K apt
apt50m60l2vrg.pdf

APT50M60L2VR500V 77A 0.060 POWER MOS V MOSFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package

6.2. Size:79K apt
apt50m60l2vfr.pdf

APT50M60L2VFR500V 77A 0.060WPOWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D

6.3. Size:158K apt
apt50m60l2vfrg.pdf

APT50M60L2VFR500V 77A 0.060 POWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D TO-264 MAX Packa

6.4. Size:33K apt
apt50m60l2vr.pdf

APT50M60L2VR500V 77A 0.060WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

Otros transistores... APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , AO3400 , APT50M85JVFR , APT50M85JVR , APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR .

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