APT50M60JN MOSFET. Datasheet pdf. Equivalent

Type Designator: APT50M60JN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 690 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 71 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 475 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 2230 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOT227

APT50M60JN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT50M60JN Datasheet (PDF)

1.1. apt50m60jvfr.pdf Size:165K _update_mosfet

APT50M60JVFR Ω 500V 63A 0.060Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Popula

1.2. apt50m60jvr.pdf Size:147K _update_mosfet

APT50M60JVR Ω 500V 63A 0.060Ω Ω Ω Ω POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Popular

1.3. apt50m60jn.pdf Size:60K _apt

D G APT50M60JN 500V 71A 0.06OΩ S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 50M60JN UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 71 Amps IDM, lLM Pulse

1.4. apt50m60jvfr.pdf Size:165K _apt