IPB80N06S2L-06 Todos los transistores

 

IPB80N06S2L-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB80N06S2L-06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 55 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 150 nC

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: PGTO263

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IPB80N06S2L-06 Datasheet (PDF)

1.1. ipp80n06s2-05 ipb80n06s2-05 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.8 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

1.2. ipp80n06s2l-06 ipb80n06s2l-06 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

 1.3. ipp80n06s2l-09 ipb80n06s2l-09 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 8.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

1.4. ipb80n06s3l-05.pdf Size:189K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.5 mΩ DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalan

 1.5. ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf Size:170K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

1.6. ipp80n06s2l-h5 ipb80n06s2l-h5 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

1.7. ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf Size:170K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki

1.8. ipp80n06s2l-07 ipb80n06s2l-07 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

1.9. ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05 green.pdf Size:158K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% A

1.10. ipp80n06s2-h5 ipb80n06s2-h5 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 5.2 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

1.11. ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf Size:132K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100%

1.12. ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08 green.pdf Size:158K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

1.13. ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07 green.pdf Size:158K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

1.14. ipp80n06s2-09 ipb80n06s2-09 green.pdf Size:155K _infineon

IPB80N06S2L-06
IPB80N06S2L-06

IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 8.8 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

Otros transistores... IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 , IPB80N06S2-07 , IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 , IPB80N06S2L-05 , TPC8107 , IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 , IPB80N06S2L-H5 , IPB80N06S4-05 , IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 .

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

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