All MOSFET. IPB80N06S2L-06 Datasheet

 

IPB80N06S2L-06 Datasheet and Replacement


   Type Designator: IPB80N06S2L-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

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IPB80N06S2L-06 Datasheet (PDF)

 ..1. Size:155K  infineon
ipb80n06s2l-06 ipp80n06s2l-06 ipp80n06s2l-06 ipb80n06s2l-06.pdf pdf_icon

IPB80N06S2L-06

IPB80N06S2L-06IPP80N06S2L-06OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 1.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPB80N06S2L-06

IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

 1.2. Size:155K  infineon
ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf pdf_icon

IPB80N06S2L-06

IPB80N06S2L-09IPP80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 8.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 1.3. Size:155K  infineon
ipb80n06s2l-07 ipp80n06s2l-07 ipp80n06s2l-07 ipb80n06s2l-07.pdf pdf_icon

IPB80N06S2L-06

IPB80N06S2L-07IPP80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

Datasheet: IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 , IPB80N06S2-07 , IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 , IPB80N06S2L-05 , RU6888R , IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 , IPB80N06S2L-H5 , IPB80N06S4-05 , IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 .

History: NTLJS2103PTAG | UPA1913 | 7NM70G-TMN2-T | SVS7N60DD2TR | QM4013S | 8205B | P3606BEA

Keywords - IPB80N06S2L-06 MOSFET datasheet

 IPB80N06S2L-06 cross reference
 IPB80N06S2L-06 equivalent finder
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 IPB80N06S2L-06 replacement

 

 
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