IPB80N08S2-07 Todos los transistores

 

IPB80N08S2-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB80N08S2-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 180 nC

Resistencia drenaje-fuente RDS(on): 0.0071 Ohm

Empaquetado / Estuche: PTO263

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IPB80N08S2-07 Datasheet (PDF)

3.1. ipp80n04s2l-03 ipb80n04s2l-03 green.pdf Size:153K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

3.2. ipp80n06s2-05 ipb80n06s2-05 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.8 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

 3.3. ipp80n06s2l-06 ipb80n06s2l-06 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

3.4. ipp80n06s2l-09 ipb80n06s2l-09 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 8.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

 3.5. ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf Size:190K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Green product (RoHS compl

3.6. ipb80n06s3l-05.pdf Size:189K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.5 mΩ DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalan

3.7. ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf Size:188K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

3.8. ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf Size:170K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

3.9. ipp80n06s2l-h5 ipb80n06s2l-h5 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

3.10. ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf Size:170K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki

3.11. ipp80n06s2l-07 ipb80n06s2l-07 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package

3.12. ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05 green.pdf Size:158K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% A

3.13. ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf Size:159K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking I

3.14. ipp80n06s2-h5 ipb80n06s2-h5 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 5.2 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

3.15. ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04 green.pdf Size:159K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

3.16. ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf Size:132K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100%

3.17. ipb80n03s4l-02 ipp i80n03s4l 03 ds 2 0.pdf Size:187K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS-T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Aval

3.18. ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08 green.pdf Size:158K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

3.19. ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf Size:187K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package

3.20. ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07 green.pdf Size:158K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

3.21. ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf Size:158K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8

3.22. ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf Size:160K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB8

3.23. ipp80n06s2-09 ipb80n06s2-09 green.pdf Size:155K _infineon

IPB80N08S2-07
IPB80N08S2-07

IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 8.8 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
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