Справочник MOSFET. IPB80N08S2-07

 

IPB80N08S2-07 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPB80N08S2-07
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 1260 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0071 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для IPB80N08S2-07

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPB80N08S2-07 Datasheet (PDF)

 ..1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPB80N08S2-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 ..2. Size:164K  infineon
ipb80n08s2-07.pdfpdf_icon

IPB80N08S2-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 ..3. Size:160K  infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPB80N08S2-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 4.1. Size:157K  infineon
ipb80n08s2l-07 ipp80n08s2l-07.pdfpdf_icon

IPB80N08S2-07

IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

Другие MOSFET... IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 , IPB80N06S2L-H5 , IPB80N06S4-05 , IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 , AON7403 , IPB80N08S2L-07 , IPB80P03P4-05 , IPB80P03P4L-04 , IPB80P03P4L-07 , IPB90N04S4-02 , IPB90N06S4-04 , IPB90N06S4L-04 , IPB009N03LG .

History: IRFS4228PBF | AFN1912

 

 
Back to Top

 


 
.