IPB80N08S2L-07 Todos los transistores

 

IPB80N08S2L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB80N08S2L-07
   Código: 2N08L07
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 300 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 183 nC
   Tiempo de subida (tr): 55 nS
   Conductancia de drenaje-sustrato (Cd): 1300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0068 Ohm
   Paquete / Cubierta: TO263

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IPB80N08S2L-07 Datasheet (PDF)

 ..1. Size:157K  infineon
ipb80n08s2l-07 ipp80n08s2l-07.pdf

IPB80N08S2L-07 IPB80N08S2L-07

IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 4.1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf

IPB80N08S2L-07 IPB80N08S2L-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 4.2. Size:164K  infineon
ipb80n08s2-07.pdf

IPB80N08S2L-07 IPB80N08S2L-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 4.3. Size:160K  infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf

IPB80N08S2L-07 IPB80N08S2L-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

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