IPB90N04S4-02 Todos los transistores

 

IPB90N04S4-02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB90N04S4-02
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO263
 

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IPB90N04S4-02 Datasheet (PDF)

 ..1. Size:163K  infineon
 ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPB90N04S4-02

IPB90N04S4-02IPI90N04S4-02, IPP90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.1mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 7.1. Size:167K  infineon
 ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPB90N04S4-02

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 7.2. Size:169K  infineon
 ipb90n06s4l-04 ipi90n06s4l-04 ipp90n06s4l-04 ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf pdf_icon

IPB90N04S4-02

IPB90N06S4L-04IPI90N06S4L-04, IPP90N06S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.4mDS(on),max I 90 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 7.3. Size:170K  infineon
 ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf pdf_icon

IPB90N04S4-02

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

MOSTRAR MÁS

Otros transistores... IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 , IPB80N08S2-07 , IPB80N08S2L-07 , IPB80P03P4-05 , IPB80P03P4L-04 , IPB80P03P4L-07 , MMD60R360PRH , IPB90N06S4-04 , IPB90N06S4L-04 , IPB009N03LG , IPB011N04LG , IPB011N04NG , IPB015N04LG , IPB015N04NG , IPB016N06L3G .

History: AP4513GM-HF | HM8810A

 

 
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