IPB90N06S4L-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB90N06S4L-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 2060 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: TO263

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IPB90N06S4L-04 datasheet

 ..1. Size:169K  infineon
 ipb90n06s4l-04 ipi90n06s4l-04 ipp90n06s4l-04 ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf pdf_icon

IPB90N06S4L-04

IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.4 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 4.1. Size:167K  infineon
 ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPB90N06S4L-04

IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.7 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 4.2. Size:170K  infineon
 ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf pdf_icon

IPB90N06S4L-04

IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.7 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 7.1. Size:163K  infineon
 ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPB90N06S4L-04

IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.1 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

MOSTRAR MÁS

Otros transistores... IPB80N06S4L-07, IPB80N08S2-07, IPB80N08S2L-07, IPB80P03P4-05, IPB80P03P4L-04, IPB80P03P4L-07, IPB90N04S4-02, IPB90N06S4-04, AOD4184A, IPB009N03LG, IPB011N04LG, IPB011N04NG, IPB015N04LG, IPB015N04NG, IPB016N06L3G, IPB017N06N3G, IPB019N06L3G