All MOSFET. IPB90N06S4L-04 Datasheet

 

IPB90N06S4L-04 Datasheet and Replacement


   Type Designator: IPB90N06S4L-04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 2060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO263
 

 IPB90N06S4L-04 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPB90N06S4L-04 Datasheet (PDF)

 ..1. Size:169K  infineon
 ipb90n06s4l-04 ipi90n06s4l-04 ipp90n06s4l-04 ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf pdf_icon

IPB90N06S4L-04

IPB90N06S4L-04IPI90N06S4L-04, IPP90N06S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.4mDS(on),max I 90 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 4.1. Size:167K  infineon
 ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPB90N06S4L-04

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 4.2. Size:170K  infineon
 ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf pdf_icon

IPB90N06S4L-04

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 7.1. Size:163K  infineon
 ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPB90N06S4L-04

IPB90N04S4-02IPI90N04S4-02, IPP90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.1mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

SHOW MORE

Datasheet: IPB80N06S4L-07 , IPB80N08S2-07 , IPB80N08S2L-07 , IPB80P03P4-05 , IPB80P03P4L-04 , IPB80P03P4L-07 , IPB90N04S4-02 , IPB90N06S4-04 , HY1906P , IPB009N03LG , IPB011N04LG , IPB011N04NG , IPB015N04LG , IPB015N04NG , IPB016N06L3G , IPB017N06N3G , IPB019N06L3G .

History: RFH35N10 | TPCS8303 | AOLF66610 | MMP6967 | AON6667 | HM20N15K | MPTD50N60N

Keywords - IPB90N06S4L-04 MOSFET datasheet

 IPB90N06S4L-04 cross reference
 IPB90N06S4L-04 equivalent finder
 IPB90N06S4L-04 lookup
 IPB90N06S4L-04 substitution
 IPB90N06S4L-04 replacement

 

 
Back to Top

 


 
.