IPB020NE7N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB020NE7N3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 2420 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET IPB020NE7N3G
IPB020NE7N3G Datasheet (PDF)
ipb020ne7n3 ipb020ne7n3g.pdf
# ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35
ipb020n04n ipb020n04ng.pdf
pe # ! ! #:A0A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking#)
ipb020n10n5lf.pdf
IPB020N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb020n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPB020N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPB020N10N5DPAK1 DescriptionFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperature
ipb020n08n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB020N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB020N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance
ipb020n10n5lf.pdf
Isc N-Channel MOSFET Transistor IPB020N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
ipb020n10n5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB020N10N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918