IPB020NE7N3G Todos los transistores

 

IPB020NE7N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB020NE7N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Corriente continua de drenaje (Id): 120 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 155 nC

Resistencia drenaje-fuente RDS(on): 0.002 Ohm

Empaquetado / Estuche: D2PAK, TO263

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IPB020NE7N3G Datasheet (PDF)

1.1. ipb020ne7n3 rev2.2.pdf Size:530K _infineon

IPB020NE7N3G
IPB020NE7N3G

# ! ! TM #:A0< &<,9=4=>:< #<:/?.> %?88,?38B?>?EC B53D96931D9?> m D n) m x Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q .5BI B5C9CD1>35 + D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75

3.1. ipb020n08n5.pdf Size:1131K _infineon

IPB020NE7N3G
IPB020NE7N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5 D²PAK 1 Description Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance

3.2. ipb020n10n5.pdf Size:1169K _infineon

IPB020NE7N3G
IPB020NE7N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPB020N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSª5 Power-Transistor, 100 V IPB020N10N5 D²PAK 1 Description Features • N-channel, normal level • Optimized for FOM OSS • Very low on-resistance R DS(on) • 175 °C operating temperature •

 3.3. ipb020n04n rev1.3.pdf Size:516K _infineon

IPB020NE7N3G
IPB020NE7N3G

pe # ! ! #:A0< &<,9=4=>:< #<:/?.> %?88,2H 1) Q * E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C 14 D Q ' 492??6= Q '@B>2= =6F6= G? O ?7 Q . =DB2 =@G @? B6C:CD2?46 D n) Q F2=2?496 D6CD65 Q )3 7B66 A=2D:?8 + @", 4@>A=:2?D Q "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking #) ' ' !

3.4. ipb020n10n5.pdf Size:204K _inchange_semiconductor

IPB020NE7N3G
IPB020NE7N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB020N10N5 ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

Otros transistores... IPB011N04NG , IPB015N04LG , IPB015N04NG , IPB016N06L3G , IPB017N06N3G , IPB019N06L3G , IPB019N08N3G , IPB020N04NG , BS170 , IPB021N06N3G , IPB022N04LG , IPB023N04NG , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G .

 

 
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