IPB051NE8NG Todos los transistores

 

IPB051NE8NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB051NE8NG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 85 V

Corriente continua de drenaje (Id): 100 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0051 Ohm

Empaquetado / Estuche: D2PAK, TO263

Búsqueda de reemplazo de MOSFET IPB051NE8NG

 

IPB051NE8NG Datasheet (PDF)

5.1. ipp057n06n3 ipb057n06n3 rev2.2.pdf Size:691K _infineon

IPB051NE8NG
IPB051NE8NG

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?>C Q

5.2. ipb057n06n.pdf Size:570K _infineon

IPB051NE8NG
IPB051NE8NG

Type IPB057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V • Optimized for synchronous rectification RDS(on),max 5.7 mW • 100% avalanche tested ID 45 A • Superior thermal resistance Qoss 32 nC • N-channel, normal level Qg(0V..10V) 27 nC • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Haloge

 5.3. ipb052n04n rev2.0.pdf Size:441K _infineon

IPB051NE8NG
IPB051NE8NG

pe # ! ! #:A0< &<,9=4=>:< #<:/?.> %?88,A9J 8AC 5A@G7CE7CD 7 D 1) R * F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ' 5:3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5:3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5:7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E R "3>A97@ 8C77 355

5.4. ipb050n06ng ipp050n06ng rev1.16.pdf Size:731K _infineon

IPB051NE8NG
IPB051NE8NG

IPP050N06N G IPB050N06N G Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 1 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package ? O ? ? O ? Marking N N N N

 5.5. ipp052n06l3 ipb052n06l3 rev2.4.pdf Size:683K _infineon

IPB051NE8NG
IPB051NE8NG

pe IPB049N06L3 G IPP052N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D

5.6. ipb055n03l.pdf Size:727K _infineon

IPB051NE8NG
IPB051NE8NG

Type IPP055N03L G IPB055N03L G ™ 3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 5.5 mW DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) •

5.7. ipb05n03la.pdf Size:341K _infineon

IPB051NE8NG
IPB051NE8NG

IPB05N03LA G OptiMOS®2 Power-Transistor Product Summary Features V 25 V DS • Ideal for high-frequency dc/dc converters R (SMD version) 4.6 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 80 A D • N-channel - Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) PG-TO263 • Superior thermal resistan

5.8. ipb05n03lbg.pdf Size:280K _infineon

IPB051NE8NG
IPB051NE8NG

IPB05N03LB OptiMOS®2 Power-Transistor Product Summary Features V 30 V DS • Ideal for high-frequency dc/dc converters R 5.0 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 80 A D • N-channel - Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) PG-TO220-3-1 PG-TO263-3 • Superior thermal resistan

Otros transistores... IPB039N10N3G , IPB041N04NG , IPB042N03LG , IPB042N10N3G , IPB048N06LG , IPB049N06L3G , IPB049NE7N3G , IPB050N06NG , IRFZ44V , IPB052N04NG , IPB054N06N3G , IPB054N08N3G , IPB055N03LG , IPB05CN10NG , IPB065N03LG , IPB065N06LG , IPB065N15N3G .

 

 
Back to Top

 


IPB051NE8NG
  IPB051NE8NG
  IPB051NE8NG
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |

 

 

 
Back to Top